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STV9378F
VERTICAL DEFLECTION BOOSTER
. . . . . .
ADVANCE DATA
POWER AMPLIFIER THERMAL PROTECTION OUTPUT CURRENT UP TO 2.0APP FLYBACK VOLTAGE UP TO 90V (on Pin 5) INTERNAL REFERENCE VOLTAGE EXTERNAL FLYBACK SUPPLY
DESCRIPTION Designed for monitors and high performance TVs, the STV9378F vertical deflection booster can handle flyback voltage up to 90V. More than this it is possible to have a flyback voltage which is more than the double of the supply (Pin 2). This allows to decrease the power consumption or to decrease the flyback time for a given supply voltage. The STV9378F operates with supplies up to 42V and provides up to 2App output current to drive the yoke. The STV9378Fis offered in HEPTAWATT package. PIN CONNECTIONS
HEPTAWATT (Plastic Package) ORDER CODE : STV9378F
7 6 5 4 3 2 1
Non-inverting Input and Reference Voltage Output Stage Supply Output GND Flyback Supply Supply Voltage Inverting Input
Tab connected to pin 4
9378F-01.EPS
July 1994
This is advance information on a new product now in development or undergoing evaluation. Details are subject to change without no tice.
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STV9378F
BLOCK DIAGRAM
OUTPUT SUPPLY STAGE VOLTAGE SUPPLY
2 6
FLYBACK SUPPLY
3
REFERENCE VOLTAGE 10k
INVERTING INPUT
1
POW ER AMPLIFIER
5
OUTPUT
NON-INVERTING INPUT
7
STV9378F
4
GROUND
ABSOLUTE MAXIMUM RATINGS
Symbol VS V6 V1 , V7 IO I3 I3 V3 - V2 Toper Tstg Tj
Notes : 1. 2. 3.
Parameter Supply Voltage (Pin 2) (see note 1) Flyback Peak Voltage (Pin 6) (see note 1) Amplifier Input Voltage (Pins 1-7) (see note 1) Maximum Output Peak Current (see notes 2 and 3) Maximum Sink Current (t < 1ms) Maximum Source Current (t < 1ms) (in the diode, see Block Diagram) Voltage Difference between Flyback Supply and Supply Voltage Operating Ambient Temperature Storage Temperature Junction Temperature
Versus GND. The output current can reach 4A peak for t 10s (up to 120Hz). Provided SOAR is respected (see Figures 1 and 2).
Value 50 100 - 0.3, + VS 1.5 1.5 1.5 70 - 20, + 75 - 40, + 150 +150
Unit V V V A A A V
o o o
C C
THERMAL DATA
Symbol Rth (j-c) Tt Tt Tjr Parameter Junction-case Thermal Resistance Temperature for Thermal Shutdown Hysteresis on Tt Recommended Max. Junction Temperature Max. Value 3 150 10 120 Unit
o
C/W
o o o
C C
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9378F-02.TBL
C
9378F-01.TBL
C
9378F-02.EPS
THERMAL PROTECTION
STV9378F
ELECTRICAL CHARACTERISTICS (VS = 42V, TA = 25oC, unless otherwise specified)
Symbol VS V3M I2 I6 IO I1 V7 V7 VS Kt GV V5L V5H VD5 - 6 VD3-6 V3-6 Parameter Operating Supply Voltage Range Operating Flyback Supply Voltage Pin 2 Quiescent Current Pin 6 Quiescent Current Max. Peak Output Current Amplifier Bias Current Internal Reference Voltage Reference Voltage Drift versus VS Reference Voltage Drift versus Tj Voltage Gain Output Saturation Voltage to GND (Pin 4) Output Saturation Voltage to Supply (Pin 6) Diode Forward Voltage between Pins 5-6 Diode Forward Voltage between Pins 3-6 Voltage Drop between Pins 3-6 (2nd part of flyback) I5 = 1A I5 = - 1A I5 = 1A I3 = 1A I3 = - 1A 80 1 1.6 1.5 1.5 2.1 1.5 2.1 2 2 2.9 VS = 24 to 42V V1 = 1V 2.2 - 0.15 2.3 2 100 I3 = 0, I5 = 0 I3 = 0, I5 = 0 5 Test Conditions Min. 10 VS 10 10 Typ. Max. 42 90 20 30 1 -1 2.4 4 150 Unit V V mA mA A A V mV/V ppm/ C dB V V V V
9378F-03.TBL
o
V
APPLICATION CIRCUIT
+ VS
Flyback Supply
2 6 3
REFERENCE VOLTAGE 10k
1
R5
POWER AMPLIFIER
5
10F
THERMAL PROTECTION
STV9378F
4
R3
R4 CL
R2
R1
9378F-03.EPS
0.22F 1.5
330
7
YOKE
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STV9378F
Figure 1 : Output Transistors SOA (for secondary breakdown)
I C (A)
@ T case = 25C
Figure 2 : Secondary Breakdown Temperature Derating Curve (ISB = secondary breakdown current)
ISB (%) 100 90
10
1
80
10 -1 t = 1ms t = 10ms t = 100ms 1 10
70
9378F-04.EPS
10 -2
10 2
60 25 50 75 100 125
4/5
9378F-05.EPS
V CE (V)
T case (C)
STV9378F
PACKAGE MECHANICAL DATA : 7 PINS - PLASTIC HEPTAWAT
L E L1 M1 A C D1 L2 L5 L3 G1 H3 Dia. PM-HEPTV.EPS F L6
Dimensions Min. A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia.
Millimeters Typ.
H2
L7
F1
G2
G
M
D
2.4 1.2 0.35 0.6 2.41 4.91 7.49 10.05 16.97 14.92 21.54 22.62 2.6 15.1 6 2.8 5.08 3.65 2.54 5.08 7.62
Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4
Min.
Inches Typ.
0.094 0.047 0.014 0.024 0.095 0.193 0.295 0.396 0.668 0.587 0.848 0.891 0.100 0.200 0.300
Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409
3 15.8 6.6
0.102 0.594 0.236 0.110 0.200
0.118 0.622 0.260
HEPTV.TBL
3.85
0.144
0.152
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved Purchase of I C Components of SGS-THOMSON Microelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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